AED 10.77
Low stock
1
Description
The IRS2113 are high voltage, high-speed power MOSFET and IGBT drivers with independent high-side and low-side referenced output channels. Pro- proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic in- puts are compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high-frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 500 V or 600V
Specifications:
Status of the component | active |
---|---|
Driven configuration | Half-bridge |
Channel type | Independently |
Number of drivers | 2 |
Gate type | IGBT, N-channel MOSFET |
Voltage supply | 10V to 20V |
Logic voltage - VIL, VIH | 6V, 9.5V |
Current - peak, output (source, sink) | 2.5A, 2.5A |
Input type | Not inverting |
Voltage, High-Side - Max. (Bootstrap) | 600V |
Rise/fall time (Typ.) | 25ns, 17ns |
operating temperature | -40 ° C to 150 ° C (TJ) |
Mounting type | Via |
Housing/shell | 14-DIP (0.300 ", 7.62mm) |
Housing type from the supplier | 14-DIP |
For more info, you can read the Datasheet by Clicking Here
Package Includes:
1x IRS2113PBF IC High Side Low Side Gate Driver DIP