IRLZ44NPBF is the New Generation HEXFETs that utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

Specifications:

Mosfet Type:  Field-Effect Transistor N-channel

Package-Type: Through Hole TO220

 Logic-Level Gate Drive

 Dynamic dv/dt Rating

 175°C Operating Temperature

 Fast Switching

 Fully Avalanche Rated

 VDSS = 55V

 RDS(on) = 0.022Ω 

 ID = 47A

 Click Here to read the Full Datasheet.

Package Contents:
1 x High Power LOW Gate MOSFET N-Channel IRLZ44NPBF TO220