The IRF3205 is a high-current N-Channel MOSFET designed for switching applications. It can handle currents up to 110A and voltages up to 55V, making it an excellent choice for power-intensive projects. With a low on-resistance of just 8.0mΩ, the IRF3205 minimizes power loss, making it suitable for applications like inverters, motor speed control, and DC-DC converters. While its high threshold voltage makes it less ideal for direct control by embedded systems, it is still a reliable and cost-effective component for various switching circuits.

Features

• High continuous drain current of up to 110A (VGS = 10V).
• Low on-resistance of 8.0mΩ for efficient power management.
• Supports drain-to-source voltages up to 55V.
• ±20V gate-to-source voltage tolerance.
• Compact and commonly used TO-220 package.
• High reliability in switching applications with a rise time of 101ns.

Specifications

• Type: N-Channel Power MOSFET.
• Maximum Drain Current (ID): 110A.
• Drain-to-Source Breakdown Voltage (VDS): 55V.
• Gate Threshold Voltage (VGS): Minimum 2V.
• Gate-Source Voltage (VGS): ±20V.
• On-Resistance (RDS(ON)): 8.0mΩ.
• Rise Time: 101ns.
• Package Type: TO-220.

Applications

• Switching applications.
• Boost converters.
• DC choppers.
• Solar inverters.
• Motor speed control.

Pinout:

Package Includes

• 1 x IRF3205 N-Channel Power MOSFET.